vuo68-08no7 3~ rectifier bridge standard rectifier module k n d h a part number vuo68-08no7 features / advantages: applications: package: package with dcb ceramic reduced weight improved temperature and power cycling planar passivated chips very low forward voltage drop very low leakage current diode for main rectification for three phase bridge configurations supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors eco-pac1 industry standard outline rohs compliant soldering pins for pcb mounting height: 9 mm base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 rrm 800 3~ rectifier i70 fsm 300 dav v = v a a = = i ixys reserves the right to change limits, conditions and dimensions. 20130322a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
vuo68-08no7 v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.15 r 1.1 k/w r min. 70 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 105 p tot 110 w t = 25c c r k/w 0.4 20 800 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions unit 1.50 t = 25c vj 150 v f0 v 0.82 t = c vj 150 r f 12.2 m ? v 1.12 t = c vj i = a f v 20 1.39 i = a f 60 i = a f 60 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 800 max. repetitive reverse blocking voltage t = 25c vj c j 10 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 300 325 325 315 a a a a 255 275 450 440 800 dav d = rectangular ? bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 900 ixys reserves the right to change limits, conditions and dimensions. 20130322a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
vuo68-08no7 ratings xxx xx-xxxxx yycw lot# made in germany circuit diagram part number date code logo package t vj c m d nm 2 mounting torque 1.5 t stg c 125 storage temperature -40 weight g 24 symbol definition typ. max. min. conditions virtual junction temperature unit v v t = 1 second v t = 1 minute isolation voltage mm mm 6.0 10.0 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 100 a per terminal 150 -40 terminal to terminal eco-pac1 delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol vuo68-08no7 483303 box 25 vuo68-08no7 standard 3000 3600 isol threshold voltage v 0.82 m ? v 0 max r 0 max slope resistance * 11 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130322a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
vuo68-08no7 k n d h a outlines eco-pac1 ixys reserves the right to change limits, conditions and dimensions. 20130322a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
vuo68-08no7 1 10 100 1000 v f [v] i f [a] 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 10 -3 10 -2 10 -1 10 0 100 150 200 250 300 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 0 20 40 60 80 100 i fsm [a] t[s] t[ms] i 2 t [a 2 s] p tot [w] i davm [a] t a [c] i f(av)m [a] t c [c] z thjc [k/w] t[ms] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 tversustimeperdiode fig. 4 power dissipation vs. direct output current & ambient temperature fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case constants for z thjc calculation: ir th (k/w) t i (s) 1 0.05070 0.004 20.163 0.0025 30.2805 0.0035 40.363 0.02 5 0.2228 0.15 0.8 x v rrm 50 hz t vj =25c t vj = 45c t vj =45c v r = 0 v r thja : 0.6 kw 0.8 kw 1kw 2kw 4kw 8kw dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 125c 150c t vj =150c t vj =150c rectifier ixys reserves the right to change limits, conditions and dimensions. 20130322a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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